首页> 外文OA文献 >Half-metallicity in Mg3C2 monolayer with carrier doping
【2h】

Half-metallicity in Mg3C2 monolayer with carrier doping

机译:具有载流子掺杂的mg3C2单层中的半金属性

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

To obtain high-performance spintronic devices with high integration density,two-dimensional (2D) half-metallic materials are eagerly pursued all along.Here, we propose a stable 2D material with a honeycomb-kagome lattice, i.e.,the Mg3C2 monolayer, based on first-principles calculations. This monolayer isan anti-ferromagnetic (AFM) semiconductor at its ground state. We furtherdemonstrate that a transition from AFM semiconductor to ferromagnetichalf-metal in this 2D material can be induced by carrier (electron or hole)doping. This magnetic transition can be understood by the Stoner criterion. Inaddition, the half-metallicity arises from the 2pz orbitals of the carbon (C)atoms for the electron-doped system, but from the C 2px and 2py orbitals forthe case of hole doping. Our findings highlight a new promising material withcontrollable magnetic and electronic properties toward 2D spintronicapplications.
机译:为了获得具有高集成度的高性能自旋电子器件,一直热切地追求二维(2D)半金属材料。在此,我们提出了一种稳定的具有蜂窝-kagome晶格的2D材料,即Mg3C2单层。关于第一性原理的计算。此单层是处于基态的反铁磁(AFM)半导体。我们进一步证明,可以通过载流子(电子或空穴)掺杂来诱导从2D材料中从AFM半导体到铁磁半金属的转变。斯通纳准则可以理解这种磁性跃迁。另外,半金属性是由电子掺杂系统的碳原子(C)的2pz轨道引起的,而对于空穴掺杂的情况是由2px和2py的C轨道引起的。我们的发现突出了一种对2D自旋电子学应用具有可控的磁性和电子特性的新材料。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号